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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-66 package *Continuous collector current-IC=-1A *Power dissipation -PD=35W @TC=25 *Complement to type 2N3583 APPLICATIONS *High speed switching and linear amplifier *High-voltage operational amplifiers *Switching regulators ,converters *Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6420 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -250 -175 -6 -1.0 -5.0 -1.0 35 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-50mA ; IB=0 IC=-1A; IB=-0.125A IC=-1A ; VCE=-10V VCE=-225V;VBE(off)=-1.5V TC=150 VCE=-150V ;IB=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-10V IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-10V 40 40 10 MIN -175 2N6420 SYMBOL VCEO(SUS) VCEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 hFE-3 TYP. MAX UNIT V -5.0 -1.4 -1.0 -3.0 -10 -5.0 V V mA mA mA 200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6420 Fig.2 Outline dimensions 3 |
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